Description
Technical data
| Purity | ＞99.9995% |
| CAS No. | 409-21-2 |
| EINECS No. | 206-991-8 |
| Forma | SiC |
| Boiling Point | 2400℃ |
| Appearance | Green Powder |
Description
1、High Purity Silicon Carbide Powder can be used as raw material for silicon carbide crystal growth.
2、High Purity Silicon Carbide Powder can be used in wide band gap semiconductor fields, mainly including Power Semiconductor Devices, Rail Transit, Industry, Photovoltaics, New Energy Vehicle, etc.
Packing and Storage
20KG/Box,Normal temperature preservation
Data Sheet