Description
Technical Data
| CAS No | 409-21-2 |
| Polytype | 4H |
| Dopant | n-type Nitrogen |
| Surface Orientation error | 4.0° toward [11-20]±0.5° |
| Main North Orientation | Parallel to [10-10]±5°/Perpendicular to [11-20]±5° |
| Edge | Chamfer |
| Diameter | 153±0.2mm |
| Main notch flat length | 18±1mm |
| Sub notch flat length | 8±3mm |
Description
Silicon Carbide (SiC) seed crystals are pivotal to the semiconductor industry, particularly for the growth of single-crystal SiC ingots used in high-temperature, high-frequency, and high-power applications. These seed crystals, available in various polytypes such as 4H-SiC, are used to initiate the epitaxial growth of SiC layers in processes like Physical Vapor Transport (PVT), which is crucial for the fabrication of electronic devices that can withstand extreme conditions.
Application
Silicon Carbide (SiC) seed crystals are instrumental in the semiconductor industry, serving as the foundation for growing single-crystal SiC ingots. These ingots are subsequently sliced into wafers, which are utilized in the fabrication of high-power, high-frequency, and high-temperature semiconductor devices such as MOSFETs and IGBTs. Particularly prominent in the electric vehicle (EV) sector for power inverters and onboard chargers, SiC devices enhance efficiency and charging speed. Additionally, they are crucial in photovoltaic inverters, improving conversion efficiency and reducing energy loss. SiC seed crystals also play a significant role in high-temperature sensors, actuators, and industrial motor controls, offering high efficiency and durability in these applications.
Data Sheet