Description
Technical Data
| Dislocation density | 0/cm2 (0 EPD) |
| Diameter | 100mm (4”) - 150mm (6”) - 200mm (8") Special diameter up to 300mm on request |
| Resistivity and Dopant | Minimum resistivity at 20 °C |
| p-type | 0.005 Ω.cm |
| n-type | 0.005 Ω.cm |
| Maximum resistivity at 20 °C | 40 Ω.cm |
| Radial dispersion on a single substrate | 10% |
| Substrate Orientation | |
| Standard | (100) ± 0.5° |
Description
Thanks to the closely-matching thermal and crystallographic properties of germanium and gallium arsenide, epi-ready germanium substrates provide an interesting alternative for the epitaxial growth and/or layer transfer of III-V compounds. For proper nucleation, the wafers are precisely "off-cut" towards the appropriate direction and have been epi-cleaned. To guarantee a pristine growth surface, all production steps are closely monitored using statistical process control, and wafers are carefully inspected.
Data Sheet