Description
Technical Data
Item |
Specification Parameters |
|
Crystal Orientation |
(100) |
|
Impurity |
UID |
Sn |
Resistivity |
0.1~0.9Ω·cm |
0.01~0.07Ω·cm |
Carrier Concentration |
10^16~10^17 cm^-3 |
~10^18 cm^-3 |
FWHM of X-ray Rocking Curve |
≤200 arc sec |
|
Dislocation Density |
<1×10^5 cm^-2 |
|
Dimensions |
Diameter |
Thickness |
150.0±0.5mm |
0.80±0.02mm |
|
Orientation Edge |
[010] direction |
|
Surface |
Single-sided polishing/Double-sided polishing Ra<0.5nm Crystal plane deviation <±1° |
|
|