Description
Technical Data
| CAS No | 409-21-2 |
| Conductivity Type | N-type |
| Dopant | Nitrogen |
| Diameter | 200±0.2mm |
| Notch Orientation | [1-100] ± 1° |
| Thickness Range | 0.5-5μm |
| Warp | ≤45μm |
| Surface Roughness(20*20μm) | ≤0.3nm |
Excellent performance
High-quality SiC epitaxial wafers with epitaxial layers featuring precisely controlled dopant concentration and thickness. SiC power devices significantly outperform conventional silicon power devices in terms of high breakdown voltage, low power loss, and fast switching. SiC epitaxial wafers contribute to energy savings, particularly for applications requiring handling high voltage and large current.
Advantages
Low defect epitaxial layers improve device yield and reliability.；Highly uniform epitaxial layers in thickness and dopant concentration help customers device designs more efficiently.
Data Sheet