Description
Technical data
| CAS No | 409-21-2 |
| Polytype | 4H |
| Dopant | n-type Nitrogen |
| Surface Orientation | [0001]±0.5° |
| Surface Orientation error | 4.0° toward [11-20]±0.5° |
| North Orientation | Parallel to [10-10]±5°/Perpendicular to [11-20]±5° |
| Edge Exclusion | 3mm |
High crystal quality for demanding power electronics
As transportation, energy and industrial markets evolve, demand for reliable, high performance power electronics continues to grow. To meet the needs for improved semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials ,for example, the 6-inch silicon carbide substrate we provide.
Excellent performance
Silicon carbide (SiC) crystal material has superior properties such as wide bandgap, high breakdown electric field, high thermal conductivity, high electron saturation rate and strong radiation resistance. It is an ideal material for preparing high-frequency and high-power devices, high-temperature electronic devices, and microwave devices.
Customized to meet your needs
Our SiC material can be customized to meet the performance and cost requirements of device design needs.
Data Sheet