Silicon Carbide: The Key Material for Ushering in a New Era of Semiconductors

Carbon silicon is gaining prominence as a new type of third-generation semiconductor material across various fields. This article explores its uses, prospects, irreplaceability, and advantages. Carbon silicon is a compound of silicon and carbon, belonging to the wide bandgap (WBG) semiconductor family. Its notable properties include high thermal conductivity, low thermal expansion coefficient, high breakdown voltage, and superior high-frequency performance, making it suitable for harsh conditions like high temperatures, high voltages, and high frequencies.

In the semiconductor field, carbon silicon-based power devices such as MOSFETs, Schottky diodes, and power modules excel in high-power, high-frequency applications. They significantly reduce energy losses and improve power conversion efficiency. For instance, in electric vehicles, they enhance driving range and charging speed. In photovoltaic inverters and wind power converters, they improve the efficiency and stability of power systems, promoting the large-scale application of renewable energy. Research shows that photovoltaic inverters using carbon silicon MOSFETs or a combination of carbon silicon MOSFETs and carbon silicon SBDs can achieve conversion efficiencies of over 99%, with energy losses reduced by more than 50% and device lifecycle extended by 50 times. Carbon silicon's high thermal conductivity and low expansion coefficient also make it valuable for high-performance computing and 5G communication integrated circuits, meeting the future needs of miniaturization, high performance, and high reliability in electronic devices. RF devices like HEMTs made from carbon silicon substrates can operate stably under high-frequency, high-power conditions, with wide applications in 5G communication, satellite communication, and radar systems for efficient signal amplification and transmission.

In other fields, carbon silicon single crystals can be used to make novel LEDs with high brightness, long life, high color rendering index, and low energy consumption. Compared to traditional sapphire-based LEDs, carbon silicon LEDs cost about half as much and have better thermal conductivity, making them significant for energy conservation and emission reduction. They can be widely used in lighting displays, traffic signals, and display screens. Carbon silicon's excellent mechanical properties make it ideal for manufacturing key components like aero engines, improving engine performance and efficiency, and enhancing aircraft fuel economy and flight performance. It can also replace platinum as a novel catalyst for fuel cells, offering high stability, reduced costs, and improved energy conversion efficiency. In the nonferrous metallurgy field, carbon silicon's high hardness and strong corrosion resistance make it suitable as a refractory material for metallurgical equipment linings, extending equipment service life. It can also be used to manufacture mechanical seals and spray nozzles, improving equipment performance and reliability. Carbon silicon has good biocompatibility and combines the high toughness and strength of reinforced composite materials, making it a promising material for bone repair and replacement in the biomedical field.

As global attention to energy efficiency and environmental protection grows, along with the rapid development of emerging industries like electric vehicles, renewable energy generation, and 5G communication, the carbon silicon market is experiencing significant growth. According to Japan's Fuji Keizai, the carbon silicon power semiconductor market is projected to expand eightfold by 2035, reaching 3.151 trillion yen. This substantial market potential has attracted numerous enterprises to invest in research and development, accelerating the maturation and industrialization of carbon silicon technology. With continuous improvements in manufacturing processes and cost reductions, the application scope of carbon silicon devices is expected to expand further, potentially replacing traditional silicon devices in many fields and becoming a mainstream material in the future semiconductor industry.

Carbon silicon's performance advantages in extreme conditions like high power, high frequency, high temperature, and high voltage are unmatched by traditional silicon materials. Its high thermal conductivity effectively addresses heat dissipation issues, low thermal expansion coefficient ensures mechanical stability, high breakdown voltage enables stable operation at higher voltages, and superior high-frequency performance meets the demands of modern electronic devices for high-speed signal processing and transmission. These advantages make carbon silicon indispensable in specific application areas such as electric vehicle fast charging, efficient renewable energy conversion, and high-temperature electronic devices in aerospace.

Carbon silicon's strong chemical inertness and corrosion resistance allow it to operate reliably in harsh environments like high temperatures, high pressures, strong acids, strong alkalis, and high radiation. This makes it suitable for applications with stringent environmental requirements, such as petrochemicals, nuclear power generation, and space exploration, where traditional silicon devices often fall short.

Carbon silicon applications not only enhance the performance and efficiency of existing electronic devices but also foster new technologies and applications. For example, in the electric vehicle field, carbon silicon power devices have driven the development of high-performance motor control and fast charging technologies, advancing the entire electric vehicle industry. Carbon silicon research and applications are also expanding in cutting-edge fields like optoelectronics and quantum computing, promising more innovative breakthroughs and injecting new vitality into technological progress.

In recent years, there have been significant advancements in carbon silicon crystal growth, substrate processing, and epitaxial growth technologies. Improved physical vapor transport (PVT) and chemical vapor deposition (CVD) technologies enable the production of larger, higher-quality carbon silicon wafers with enhanced purity, consistency, and reduced defect density, providing a foundation for high-performance devices. Advanced doping technologies also enable precise control of carbon silicon's electrical properties to meet diverse application requirements.

Researchers have developed various novel device structures like carbon silicon MOSFETs, JBS Schottky diodes, and IGBTs, leveraging carbon silicon's advantages. These structures optimize electric field distribution, reduce on-resistance and switching losses, and enhance device voltage and frequency capabilities, making carbon silicon devices superior to traditional silicon devices and representative of semiconductor device development.

Carbon silicon devices, with their miniaturization and high performance, offer significant advantages in system integration. Operating at higher power densities and frequencies, they reduce system size and weight while improving integration and efficiency. For example, electric vehicle power drive systems using carbon silicon devices achieve higher power output and more compact designs, boosting vehicle performance and range. In data centers, carbon silicon devices lower floor space and cooling costs, enhancing operational efficiency.